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IRD探测器AXUV20HS1团购拼单

PHOTODIODE 5 mm,AXUV20HS1 FEATURES:Circular active area、Ideal for electron detection、100% internal QE、High speed、Grid lines 5 microns,Pitch 100 microns、RoHS and REACH compliant。 THERMAL PARAMETERS STORAGE AND OPERATING TEMPE

IRD探测器AXUV20HS1团购拼单

2021-07-06 14:07 上一篇:HYDAC 温度变送器 ETS7246-A-000 现货20个 单价1300 |下一篇:BILBEE温控器B-200 A-683

  PHOTODIODE Ø5 mm,AXUV20HS1

  FEATURES:Circular active area、Ideal for electron detection、100% internal QE、High speed、Grid lines 5 microns,Pitch 100 microns、RoHS and REACH compliant。放大器SD7301D20-AA

  THERMAL PARAMETERS

  STORAGE AND OPERATING TEMPERATURE RANGE

  Ambient1:-10° TO 40°C1

  Nitrogen or Vacuum:-20°C TO 80°C。BILBEE温控器

  Lead Soldering Temperature2:260°C

  1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.

  20.080" from case for 10 seconds.

  Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover。VIBCO振动器

IRD探测器AXUV20HS1团购拼单

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C        
PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS
Active Area Ø5.01mm   19.7   mm2
Responsivity, R (see graphs on next page)     A/W
Reverse Breakdown Voltage, VR R = 1µA 160     Volts
Capacitance, C VR = 0V   200 800 pF
Rise Time RL = 50Ω, VR = 150V   2 nsec
Dark Current VR = 150V     100 nA
MICRONEXT量角器

供应商

  • 经销商

    上海兆茗电子科技有限公司

    咨询热线:021-32231568

标题:IRD探测器AXUV20HS1团购拼单

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