IRD探测器AXUV20HS1团购拼单
PHOTODIODE 5 mm,AXUV20HS1 FEATURES:Circular active area、Ideal for electron detection、100% internal QE、High speed、Grid lines 5 microns,Pitch 100 microns、RoHS and REACH compliant。 THERMAL PARAMETERS STORAGE AND OPERATING TEMPE
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PHOTODIODE Ø5 mm,AXUV20HS1
FEATURES:Circular active area、Ideal for electron detection、100% internal QE、High speed、Grid lines 5 microns,Pitch 100 microns、RoHS and REACH compliant。放大器SD7301D20-AA
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1:-10° TO 40°C1
Nitrogen or Vacuum:-20°C TO 80°C。BILBEE温控器
Lead Soldering Temperature2:260°C
1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
20.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover。VIBCO振动器
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C | |||||
PARAMETERS | TEST CONDITIONS | MIN | TYP | MAX | UNITS |
Active Area | Ø5.01mm | 19.7 | mm2 | ||
Responsivity, R | (see graphs on next page) | A/W | |||
Reverse Breakdown Voltage, VR | R = 1µA | 160 | Volts | ||
Capacitance, C | VR = 0V | 200 | 800 | pF | |
Rise Time | RL = 50Ω, VR = 150V | 2 | nsec | ||
Dark Current | VR = 150V | 100 | nA |
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标题:IRD探测器AXUV20HS1团购拼单
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